Research course

Development of New CCD and CMOS Image Sensor Technology

Open University · School of Physical Sciences

Entry requirements

Minimum 2:1 (or equivalent).

Months of entry

February, October

Course content

The Centre for Electronic Imaging at The Open University aims to develop the next generation of complementary metal-oxide semiconductor (CMOS) image sensors suitable for Earth observation, ground and space-based astronomy, and other science applications requiring high quantum efficiency in the red and near-infrared parts of the spectrum. The main innovation is the achievement of high QE by full depletion of the thick sensitive semiconductor layer using reverse substrate bias. In this way, sensitive detector thickness of 100 μm or more can be realised, instead of the current 5–10-μm-thick devices. The development will concentrate on building silicon CMOS image sensors using pinned photodiode photosensitive elements, capable of achieving science-grade imaging performance.

The technological advances from this work will allow many space-based imaging instruments to transition from charge-coupled device (CCD) to CMOS devices and benefit from better radiation hardness, higher readout speeds, increased level of integration and lower power dissipation.

Qualification, course duration and attendance options

  • PhD
    full time
    36 months
      part time
      72 months

      Course contact details

      Administrative Support
      +44 (0)1908 858253